VBsemi Elec · FETs & Power MOSFETs · MPN SIS444DN-T1-GE3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 102nC@10V |
| Output Capacitance(Coss) | 406pF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 52W |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| RDS(on) | 5mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 6nF |
| Type | N-Channel |
N-Channel 30V 60A 52W Surface Mount DFN3x3-8