VBsemi Elec · FETs & Power MOSFETs · MPN SIR880DP-VB
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| Gate Charge(Qg) | 57nC@10V |
|---|---|
| Drain to Source Voltage | 80V |
| Output Capacitance(Coss) | 1.1nF |
| Current - Continuous Drain(Id) | 60A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 104W |
| Reverse Transfer Capacitance (Crss@Vds) | 93pF |
| RDS(on) | 4.8mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.8nF |
| Type | N-Channel |
N-Channel 80V 60A 104W Surface Mount DFN5x6-8