VBsemi Elec · FETs & Power MOSFETs · MPN SIR873DP-T1-GE3-VB
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| Gate Charge(Qg) | 115nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 390pF |
| Current - Continuous Drain(Id) | 22A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 10W |
| Reverse Transfer Capacitance (Crss@Vds) | 290pF |
| RDS(on) | 70mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 5nF |
| Type | P-Channel |
P-Channel 150V 22A Surface Mount DFN5x6-8