VBsemi Elec · FETs & Power MOSFETs · MPN SIR696DP-T1-GE3-VB
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| Gate Charge(Qg) | 60nC@10V |
|---|---|
| Drain to Source Voltage | 150V |
| Output Capacitance(Coss) | 470pF |
| Current - Continuous Drain(Id) | 70A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 136W |
| RDS(on) | 15mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.3nF |
| Type | N-Channel |
N-Channel 150V 70A Surface Mount DFN-8-EP(5x6)