VBsemi Elec · FETs & Power MOSFETs · MPN SIR616DP-T1-GE3-VB
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| Gate Charge(Qg) | 20nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | 30A |
| Output Capacitance(Coss) | 142pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 66.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 11pF |
| RDS(on) | 43mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.38nF |
| Type | N-Channel |
N-Channel 200V 30A 66.6W Surface Mount DFN-8-EP(5x6)