VBsemi Elec · FETs & Power MOSFETs · MPN SIR5607DP-T1-RE3-VB
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| Drain to Source Voltage | 60V |
|---|---|
| Gate Charge(Qg) | 100nC@10V |
| Output Capacitance(Coss) | 450pF |
| Current - Continuous Drain(Id) | 80A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 68W |
| Reverse Transfer Capacitance (Crss@Vds) | 275pF |
| RDS(on) | 7.5mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 12nF |
| Type | P-Channel |
P-Channel 60V 80A 68W Surface Mount DFN5x6-8