VBsemi Elec SIR474DP-T1-GE3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SIR474DP-T1-GE3-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)31nC@4.5V;61nC@10V
Current - Continuous Drain(Id)80A
Output Capacitance(Coss)425pF
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation155W
RDS(on)7mΩ@10V;9mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)170pF
Number1 N-channel
Input Capacitance(Ciss)1.18nF
TypeN-Channel

Technical details

N-Channel 30V 80A 155W Surface Mount DFN5x6-8

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