VBsemi Elec · FETs & Power MOSFETs · MPN SIR436DP-T1-GE3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 71nC@10V;61.5nC@4.5V |
| Output Capacitance(Coss) | 1.025nF |
| Current - Continuous Drain(Id) | 120A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V;2.5V |
| Pd - Power Dissipation | 210W |
| RDS(on) | 3mΩ@10V;5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 970pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 3.2nF |
| Type | N-Channel |
N-Channel 30V 120A 210W Surface Mount DFN5x6-8