VBsemi Elec · FETs & Power MOSFETs · MPN SiHU4N80E-VB
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| Gate Charge(Qg) | 122nC@10V |
|---|---|
| Drain to Source Voltage | 800V |
| Output Capacitance(Coss) | 81pF |
| Current - Continuous Drain(Id) | 5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 190W |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 1.1Ω@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.3nF |
| Type | N-Channel |
N-Channel 800V 5A 190W Through Hole TO-251