VBsemi Elec SIHFR020-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SIHFR020-E3-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)19.8nC@10V
Output Capacitance(Coss)85pF
Current - Continuous Drain(Id)18A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V;3V
Pd - Power Dissipation41.7W
RDS(on)73mΩ@10V;85mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)40pF
Input Capacitance(Ciss)660pF
TypeN-Channel

Technical details

N-Channel 60V 18A 41.7W Surface Mount TO-252

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