VBsemi Elec · FETs & Power MOSFETs · MPN SiHF9620S-GE3-VB
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| Output Capacitance(Coss) | 370pF |
|---|---|
| Pd - Power Dissipation | 105W |
| Configuration | - |
| Gate Charge(Qg) | 44nC |
| Drain to Source Voltage | 200V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| RDS(on) | 2Ω@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 81pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 700pF |
105W 200V 1.5V 2Ω@10V 1 P-Channel P-Channel TO-263 Single FETs, MOSFETs RoHS