VBsemi Elec · FETs & Power MOSFETs · MPN SiHB12N60E-GE3-VB
No reviews yet — be the first to review VBsemi Elec SiHB12N60E-GE3-VB.
| Gate Charge(Qg) | 71nC@10V |
|---|---|
| Drain to Source Voltage | 650V |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 105pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3.5V |
| Pd - Power Dissipation | 228W |
| Reverse Transfer Capacitance (Crss@Vds) | 4pF |
| RDS(on) | 360mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.322nF |
| Type | N-Channel |
N-Channel 650V 18A 228W Surface Mount TO-263(D2PAK)