VBsemi Elec · FETs & Power MOSFETs · MPN SiA923EDJ-T1-GE3-VB
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| Gate Charge(Qg) | 14nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 5.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 2.8W |
| RDS(on) | 88mΩ@10V;60mΩ@4.5V |
| Number | 2 P-Channel |
| Type | P-Channel |
P-Channel 30V 5.4A 2.8W Surface Mount DFN-6(2x2)