VBsemi Elec · FETs & Power MOSFETs · MPN SIA477EDJ-T1-GE3-VB
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 54nC@8V |
| Output Capacitance(Coss) | 430pF |
| Current - Continuous Drain(Id) | 20A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 17W |
| RDS(on) | 50mΩ@1.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.6nF |
| Type | P-Channel |
P-Channel 20V 20A 17W DFN2x2-6-EP