VBsemi Elec · FETs & Power MOSFETs · MPN SIA449DJ-T1-GE3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 38nC@8V;23nC@4.5V |
| Current - Continuous Drain(Id) | 10A |
| Output Capacitance(Coss) | 430pF |
| Operating Temperature - | -55℃~+150℃ |
| Pd - Power Dissipation | 17W |
| Reverse Transfer Capacitance (Crss@Vds) | 370pF |
| RDS(on) | 22mΩ@4.5V;30mΩ@2.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2nF |
| Type | P-Channel |
30V 10A 17W 1 P-Channel P-Channel QFN-6(2x2) Single FETs, MOSFETs RoHS