VBsemi Elec · FETs & Power MOSFETs · MPN SI9926BDY-T1-E3-VB
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| Gate Charge(Qg) | 9.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | - |
| Current - Continuous Drain(Id) | 7.1A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 19mΩ@4.5V;26mΩ@2.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | - |
| Type | N-Channel |
N-Channel 20V 7.1A 2W Surface Mount SO-8