VBsemi Elec · FETs & Power MOSFETs · MPN SI7884DP-T1-GE3-VB
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| Gate Charge(Qg) | 61nC@10V;31.5nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 80A |
| Output Capacitance(Coss) | 425pF |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 820mV |
| Pd - Power Dissipation | 155W |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| RDS(on) | 7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.18nF |
| Type | N-Channel |
N-Channel 30V 80A 155W Surface Mount DFN5x6-8