VBsemi Elec SI7858BDP-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI7858BDP-VB

No reviews yet — be the first to review VBsemi Elec SI7858BDP-VB.

Specifications

Gate Charge(Qg)34nC@4.5V
Drain to Source Voltage30V
Output Capacitance(Coss)1.725nF
Current - Continuous Drain(Id)160A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation250W
Reverse Transfer Capacitance (Crss@Vds)83pF
RDS(on)2.5mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)66pF
TypeN-Channel

Technical details

N-Channel 30V 160A 250W Surface Mount DFN5x6-8

Related FETs & Power MOSFETs