VBsemi Elec · FETs & Power MOSFETs · MPN SI7850DP-T1-E3-VB
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| Gate Charge(Qg) | 11.1nC@10V;5.2nC@4.5V |
|---|---|
| Drain to Source Voltage | 60V |
| Output Capacitance(Coss) | 330pF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.8V |
| Pd - Power Dissipation | 35.7W |
| Reverse Transfer Capacitance (Crss@Vds) | 14pF |
| RDS(on) | 24mΩ@10V;28mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 790pF |
| Type | N-Channel |
N-Channel 60V 15A 35.7W Surface Mount DFN-8(5x6)