VBsemi Elec · FETs & Power MOSFETs · MPN SI7636DP-T1-E3-VB
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| Output Capacitance(Coss) | 425pF |
|---|---|
| Pd - Power Dissipation | 155W |
| Configuration | - |
| Gate Charge(Qg) | 31nC |
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 500mV |
| RDS(on) | 7mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 170pF |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.18nF |
155W 30V 500mV 7mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS