VBsemi Elec SI7617DN-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI7617DN-VB

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Specifications

Gate Charge(Qg)15nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)385pF
Current - Continuous Drain(Id)45A
Operating Temperature --50℃~+150℃
Gate Threshold Voltage (Vgs(th))2.8V
Pd - Power Dissipation31.25W
Reverse Transfer Capacitance (Crss@Vds)322pF
RDS(on)18mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)2nF
TypeP-Channel

Technical details

P-Channel 30V 45A 31.25W Surface Mount DFN3x3-8

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