VBsemi Elec SI7611DN-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI7611DN-VB

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Specifications

Gate Charge(Qg)90nC@10V
Drain to Source Voltage40V
Output Capacitance(Coss)615pF
Current - Continuous Drain(Id)45A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation48W
Reverse Transfer Capacitance (Crss@Vds)554pF
RDS(on)12mΩ@10V
Number1 P-Channel
Input Capacitance(Ciss)5.125nF
TypeP-Channel

Technical details

P-Channel 40V Surface Mount DFN-8(3x3)

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