VBsemi Elec · FETs & Power MOSFETs · MPN SI7456CDP-T1-GE3-VB
No reviews yet — be the first to review VBsemi Elec SI7456CDP-T1-GE3-VB.
| Output Capacitance(Coss) | 132pF |
|---|---|
| Pd - Power Dissipation | 60W |
| Configuration | - |
| Drain to Source Voltage | 100V |
| Gate Charge(Qg) | 20nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Reverse Transfer Capacitance (Crss@Vds) | 11.2pF |
| RDS(on) | 17mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.47nF |
60W 100V 3V 17mΩ@10V 1 N-channel N-Channel DFN-8(5x6) Single FETs, MOSFETs RoHS