VBsemi Elec SI7450DP-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI7450DP-VB

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Specifications

Gate Charge(Qg)25nC@10V
Drain to Source Voltage200V
Current - Continuous Drain(Id)30A
Output Capacitance(Coss)142pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation104W
RDS(on)38mΩ@10V;43mΩ@7.5V
Reverse Transfer Capacitance (Crss@Vds)11pF
Number1 N-channel
Input Capacitance(Ciss)1.38nF
TypeN-Channel

Technical details

N-Channel 200V 30A 104W Surface Mount DFN5x6-8

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