VBsemi Elec · FETs & Power MOSFETs · MPN SI7415DN-T1-GE3-VB
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| Output Capacitance(Coss) | 310pF |
|---|---|
| Pd - Power Dissipation | 68W |
| Drain to Source Voltage | 60V |
| Configuration | - |
| Gate Charge(Qg) | 65nC |
| Current - Continuous Drain(Id) | - |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| RDS(on) | 21mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 200pF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 2.6nF |
68W 60V 2V 21mΩ@10V 1 P-Channel P-Channel DFN-8(3x3) Single FETs, MOSFETs RoHS