VBsemi Elec SI7228DN-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI7228DN-VB

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Specifications

Gate Charge(Qg)4.1nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)115pF
Current - Continuous Drain(Id)26A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation14.8W
Reverse Transfer Capacitance (Crss@Vds)46pF
RDS(on)16mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)480pF
Vgs±20V

Technical details

N-Channel Array 30V 26A 14.8W Surface Mount DFN-8(3x3)

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