VBsemi Elec · FETs & Power MOSFETs · MPN SI7172DP-T1-GE3-VB
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| Gate Charge(Qg) | 38nC@10V |
|---|---|
| Drain to Source Voltage | 200V |
| Output Capacitance(Coss) | 142pF |
| Current - Continuous Drain(Id) | 30A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 4V |
| Pd - Power Dissipation | 66.6W |
| RDS(on) | 43mΩ@7.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.38nF |
| Type | N-Channel |
200V 30A 4V 66.6W 43mΩ@7.5V 1 N-channel N-Channel DFN-8L(5x6) Single FETs, MOSFETs RoHS