VBsemi Elec · FETs & Power MOSFETs · MPN SI7145DP-T1-GE3-VB
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| Gate Charge(Qg) | 250nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.215nF |
| Current - Continuous Drain(Id) | 100A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 104W |
| RDS(on) | 5mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 1.125nF |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 8.65nF |
| Type | P-Channel |
P-Channel 30V 100A 104W Surface Mount DFN-8-EP(5x6)