VBsemi Elec SI7141DP-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI7141DP-VB

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Specifications

Gate Charge(Qg)250nC@10V
Drain to Source Voltage30V
Output Capacitance(Coss)1.215nF
Current - Continuous Drain(Id)100A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation104W
Reverse Transfer Capacitance (Crss@Vds)1.125nF
RDS(on)5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)8.65nF
TypeP-Channel

Technical details

P-Channel 30V 100A 104W Surface Mount DFN5x6-8

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