VBsemi Elec · FETs & Power MOSFETs · MPN SI7110DN-T1-GE3-VB
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| Gate Charge(Qg) | 9.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Output Capacitance(Coss) | 445pF |
| Current - Continuous Drain(Id) | 19.8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Pd - Power Dissipation | 3.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 38pF |
| RDS(on) | 5.5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 1.45nF |
| Vgs | ±12V |
N-Channel 20V 19.8A 3.6W Surface Mount DFN3x3-8