VBsemi Elec SI7101DN-T1-GE3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI7101DN-T1-GE3-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)39.5nC@4.5V
Current - Continuous Drain(Id)52A
Output Capacitance(Coss)452pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation52W
Reverse Transfer Capacitance (Crss@Vds)430pF
RDS(on)5mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)4.427nF
TypeP-Channel

Technical details

P-Channel 30V 52A 52W Surface Mount DFN3x3-8

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