VBsemi Elec · FETs & Power MOSFETs · MPN SI6435ADQ-T1-VB
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| Gate Charge(Qg) | 46nC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 9A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 1.5W |
| RDS(on) | 10mΩ@4.5V |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 20V 9A 1.5W Surface Mount TSSOP-8