VBsemi Elec · FETs & Power MOSFETs · MPN SI4944DY-T1-E3-VB
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| Gate Charge(Qg) | 15nC |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 175pF |
| Current - Continuous Drain(Id) | 11A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.1W |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| RDS(on) | 10mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 641pF |
| Vgs | ±20V |
N-Channel 30V 11A 2.1W Surface Mount SO-8