VBsemi Elec · FETs & Power MOSFETs · MPN SI4933DY-T1-E3-VB
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 34.5nC@4.5V |
| Current - Continuous Drain(Id) | 6.7A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| RDS(on) | 18mΩ@4.5V |
| Number | 2 P-Channel |
| Type | P-Channel |
P-Channel 20V 6.7A 2W Surface Mount SO-8