VBsemi Elec SI4933DY-T1-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI4933DY-T1-E3-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)34.5nC@4.5V
Current - Continuous Drain(Id)6.7A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1V
Pd - Power Dissipation2W
RDS(on)18mΩ@4.5V
Number2 P-Channel
TypeP-Channel

Technical details

P-Channel 20V 6.7A 2W Surface Mount SO-8

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