VBsemi Elec · FETs & Power MOSFETs · MPN SI4920DY-T1-E3-VB
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| Gate Charge(Qg) | 14.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 140pF |
| Current - Continuous Drain(Id) | 7.2A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 86pF |
| RDS(on) | 16mΩ@10V;20mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 660pF |
| Type | N-Channel |
N-Channel 30V 7.2A 2W Surface Mount SO-8