VBsemi Elec · FETs & Power MOSFETs · MPN SI4840BDY-T1-E3-VB
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| Gate Charge(Qg) | 15nC@10V |
|---|---|
| Drain to Source Voltage | 40V |
| Current - Continuous Drain(Id) | 10A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 3.8W |
| Reverse Transfer Capacitance (Crss@Vds) | 150pF |
| RDS(on) | - |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2nF |
N-Channel 40V 10A 3.8W Surface Mount SO-8