VBsemi Elec · FETs & Power MOSFETs · MPN SI4825DDY-T1-E3-VB
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| Gate Charge(Qg) | 43nC@10V;22nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 380pF |
| Current - Continuous Drain(Id) | 11.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 5.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 325pF |
| RDS(on) | 11mΩ@10V;12mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 1.96nF |
| Type | P-Channel |
P-Channel 30V 11.6A 5.6W Surface Mount SO-8