VBsemi Elec · FETs & Power MOSFETs · MPN SI4816BDY-T1-GE3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Configuration | Half-Bridge |
| Gate Charge(Qg) | 59nC@10V |
| Output Capacitance(Coss) | 2.29nF |
| Current - Continuous Drain(Id) | 15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.98W |
| RDS(on) | 21mΩ@4.5V |
| Reverse Transfer Capacitance (Crss@Vds) | 360pF |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.535nF |
N-Channel Array 30V 15A 1.98W Surface Mount SO-8