VBsemi Elec · FETs & Power MOSFETs · MPN SI4736DY-T1-E3-VB
No reviews yet — be the first to review VBsemi Elec SI4736DY-T1-E3-VB.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 6.8nC@5V |
| Current - Continuous Drain(Id) | 13A |
| Output Capacitance(Coss) | 165pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4.1W |
| RDS(on) | 11mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 800pF |
| Type | N-Channel |
N-Channel 30V 13A 4.1W Surface Mount SO-8