VBsemi Elec · FETs & Power MOSFETs · MPN SI4686DY-T1-GE3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 15nC@10V;6.8nC@5V |
| Current - Continuous Drain(Id) | 18A |
| Output Capacitance(Coss) | 195pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 73pF |
| RDS(on) | 4mΩ@10V;5mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 820pF |
| Type | N-Channel |
N-Channel 30V 18A 4.5W Surface Mount SO-8