VBsemi Elec · FETs & Power MOSFETs · MPN SI4618DY-T1-E3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 29nC@10V;39nC@10V |
| Output Capacitance(Coss) | 205pF;360pF |
| Current - Continuous Drain(Id) | 8A;15A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.5V |
| Pd - Power Dissipation | 1.98W;4.16W |
| Reverse Transfer Capacitance (Crss@Vds) | 91pF;117pF |
| RDS(on) | 17mΩ@10V;9mΩ@10V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 1.535nF;2.29nF |
| Type | N-Channel |
N-Channel 30V 8A 4.16W Surface Mount SO-8