VBsemi Elec · FETs & Power MOSFETs · MPN SI4542DY-T1-E3-VB
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| Gate Charge(Qg) | 6.2nC@10V;18.5nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 95pF;115pF |
| Current - Continuous Drain(Id) | 8A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Pd - Power Dissipation | 2W |
| Reverse Transfer Capacitance (Crss@Vds) | 33pF;57pF |
| RDS(on) | 18mΩ@10V;40mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 510pF;620pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 8A 2W Surface Mount SO-8