VBsemi Elec · FETs & Power MOSFETs · MPN SI4532DY-T1-GE3-VB
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| Gate Charge(Qg) | 63nC@10V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 8A |
| Output Capacitance(Coss) | 115pF |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 3.1W |
| RDS(on) | 18mΩ@10V;40mΩ@10V |
| Reverse Transfer Capacitance (Crss@Vds) | 57pF |
| Input Capacitance(Ciss) | 620pF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel Array 30V 8A 3.1W Surface Mount SO-8