VBsemi Elec · FETs & Power MOSFETs · MPN Si4501BDY-T1-GE3-VB
No reviews yet — be the first to review VBsemi Elec Si4501BDY-T1-GE3-VB.
| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 13.3nC@10V;13nC@10V |
| Output Capacitance(Coss) | 755pF;800pF |
| Current - Continuous Drain(Id) | 11A;10.5A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V;2.5V |
| Pd - Power Dissipation | 3W |
| Reverse Transfer Capacitance (Crss@Vds) | 254pF;25pF |
| RDS(on) | 11mΩ@10V;21mΩ@10V |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 1.421nF;1.515nF |
| Type | N-Channel + P-Channel |
N-Channel+P-Channel 30V 11A 3W Surface Mount SO-8