VBsemi Elec · FETs & Power MOSFETs · MPN SI4491EDY-T1-E3-VB
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| Gate Charge(Qg) | 27nC@4.5V |
|---|---|
| Drain to Source Voltage | 30V |
| Output Capacitance(Coss) | 1.42nF |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2.2V |
| Pd - Power Dissipation | 5.6W |
| Reverse Transfer Capacitance (Crss@Vds) | 70pF |
| RDS(on) | 5mΩ@10V;8mΩ@4.5V |
| Number | 1 P-Channel |
| Input Capacitance(Ciss) | 3.49nF |
| Type | P-Channel |
P-Channel 30V 18A 5.6W Surface Mount SO-8