VBsemi Elec SI4470DY-T1-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI4470DY-T1-E3-VB

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Specifications

Drain to Source Voltage60V
Gate Charge(Qg)32nC@10V
Current - Continuous Drain(Id)12A
Output Capacitance(Coss)90pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation5W
Reverse Transfer Capacitance (Crss@Vds)55pF
RDS(on)15mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)1.1nF
TypeN-Channel

Technical details

N-Channel 60V 12A 5W Surface Mount SO-8

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