VBsemi Elec SI4435DYTRPBF-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI4435DYTRPBF-VB

No reviews yet — be the first to review VBsemi Elec SI4435DYTRPBF-VB.

Specifications

Drain to Source Voltage30V
Gate Charge(Qg)13nC@10V
Output Capacitance(Coss)180pF
Current - Continuous Drain(Id)9A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation4.2W
Reverse Transfer Capacitance (Crss@Vds)145pF
RDS(on)24mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)1.455nF
TypeP-Channel

Technical details

P-Channel 30V 9A 4.2W Surface Mount SO-8

Related FETs & Power MOSFETs