VBsemi Elec SI4423DY-T1-E3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI4423DY-T1-E3-VB

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)29.5nC@4.5V
Current - Continuous Drain(Id)13.5A
Output Capacitance(Coss)455pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))2.5V
Pd - Power Dissipation20W
RDS(on)15mΩ@4.5V
Reverse Transfer Capacitance (Crss@Vds)390pF
Number1 P-Channel
Input Capacitance(Ciss)2.55nF
TypeP-Channel

Technical details

P-Channel 30V 13.5A 20W Surface Mount SO-8

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