VBsemi Elec · FETs & Power MOSFETs · MPN SI4406DY-T1-E3-VB
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 10.2nC@5V |
| Current - Continuous Drain(Id) | 18A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 3V |
| Pd - Power Dissipation | 4.5W |
| RDS(on) | 5mΩ@4.5V |
| Type | N-Channel |
30V 18A 3V 4.5W 5mΩ@4.5V N-Channel SOP-8 Single FETs, MOSFETs RoHS