VBsemi Elec SI4403DDY-T1-GE3-VB

VBsemi Elec · FETs & Power MOSFETs · MPN SI4403DDY-T1-GE3-VB

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Specifications

Drain to Source Voltage20V
Gate Charge(Qg)20nC
Current - Continuous Drain(Id)13A
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.2V
Pd - Power Dissipation2.9W
RDS(on)40mΩ@1.8V
Number1 P-Channel
TypeP-Channel

Technical details

P-Channel 20V 13A 2.9W Surface Mount SO-8

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