VBsemi Elec · FETs & Power MOSFETs · MPN SI4403DDY-T1-GE3-VB
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| Drain to Source Voltage | 20V |
|---|---|
| Gate Charge(Qg) | 20nC |
| Current - Continuous Drain(Id) | 13A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.2V |
| Pd - Power Dissipation | 2.9W |
| RDS(on) | 40mΩ@1.8V |
| Number | 1 P-Channel |
| Type | P-Channel |
P-Channel 20V 13A 2.9W Surface Mount SO-8